Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors

Excitonic recombination in GaN grown by molecular beam epitaxy

Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ mon...

CdSe quantum dots grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy: Optical studies

We report detailed studies of the photoluminescence ~PL! properties of CdSe quantum dots ~QDs! grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy. We performed steady-state and time-resolved PL measurements and observed that nonradiative processes dominate at room temperature ~RT! in the CdSe/Zn0.97Be0.03Se QD structures while these nonradiative processes do not dominate in the CdSe/ZnS...

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and th...